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Space Charge Doped p-n Junction : 2D Diode with Few-layer Indium Selenide

Abstract : This work combines the singular properties of 2D materials with an innovative technique used for changing the electronic properties of ultra-thin films to propose a new technology for making the simplest bipolar electronic device, the diode. Firstly we identify semiconducting materials which can be fabricated in ultra-thin layers. Secondly, we use a proprietary technique called Space Charge Doping developed in our group for doping the material, either n or p. Finally, we obtain diode characteristics from the device. The manuscript begins with a review of different materials and properties. In the family of 2D materials, our choice was a III-VI layered semiconductor with a direct bandgap: InSe. We also chose a completely different kind of material, polycrystalline CdO, which is neither layered nor has a direct bandgap but is easy to fabricate in the ultra-thin film form and has high carrier mobility. After preliminary experiments, we chose InSe and fabricated devices of ultra-thin, few atomic layer InSe thin films. We chose to develop in parallel two different geometries for the p-n junction diode. We were able to obtain rectifying behavior for each geometry implying that our space charge doping approach was successful in producing microscopically, spatially differentiated doping in each device. We discuss the obtained I-V characteristics and the inherent limitations of the devices (local heating, hysteresis) and suggest improvements for future experiments and ways of obtaining more efficient and stable functioning and geometry as part of the perspectives of this thesis.
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Submitted on : Monday, July 11, 2022 - 12:24:14 PM
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  • HAL Id : tel-03719568, version 1

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Wenyi Wu. Space Charge Doped p-n Junction : 2D Diode with Few-layer Indium Selenide. Other. Sorbonne Université, 2020. English. ⟨NNT : 2020SORUS449⟩. ⟨tel-03719568⟩

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