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hal-03264045v1  Journal articles
B. XiaJ.J. GanemS. SteydliH. TancrezI. Vickridge. RBS and NRA analysis for films with high growth rate prepared by atomic layer deposition
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Elsevier, 2021, 489, pp.20-25. ⟨10.1016/j.nimb.2020.12.015⟩
hal-00005053v1  Conference papers
J.J. GanemI. TrimailleIan VickridgeD. BlinF. Martin. Study of thin hafnium oxides deposited by atomic layer deposition
the Sixteenth International Conference on Ion Beam Analysis, 2004, France. pp.856-861., ⟨10.1016/j.nimb.2004.01.176⟩
hal-00005209v1  Journal articles
De Almeida R.M.C.I.J.R. BaumvolJ.J. GanemI. TrimailleS. Rigo. Thermal growth of silicon oxynitride films on Si: A reaction-diffusion approach
Journal of Applied Physics, American Institute of Physics, 2004, 95, pp.1770-1773. ⟨10.1063/1.1639139⟩
hal-00002618v1  Journal articles
Ian VickridgeD. TromsonI. TrimailleJ.J. GanemE. Szilagyi et al.  Oxygen isotopic exchange occurring during dry thermal oxidation of 6H SiC
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Elsevier, 2002, 190, pp.574. ⟨10.1016/S0168-583X(01)01303-9⟩