INTERNAL FRICTION AND YOUNG'S MODULUS MEASUREMENTS ON SiO2 AND Ta2O5 FILMS DONE WITH AN ULTRA-HIGH Q SILICON-WAFER SUSPENSION

M Granata (1) , L Balzarini (1) , J Degallaix (1) , V Dolique (1) , R Flaminio (1) , D Forest (1) , D Hofman (1) , C Michel , R Pedurand (1) , L Pinard (1) , B Sassolas (1) , N Straniero (1) , J Teillon , G Cagnoli (1)

1 LMA - Laboratoire des matériaux avancés

In order to study the internal friction of thin films a nodal suspension system called GeNS (Gentle Nodal Suspension) has been developed. The key features of this system are: i) the possibility to use substrates easily available like silicon wafers; ii) extremely low excess losses coming from the suspension system which allows to measure Q factors in excess of 2×10^8 on 3 " diameter wafers; iii) reproducibility of measurements within few percent on mechanical losses and 0.01% on resonant frequencies; iv) absence of clamping; v) the capability to operate at cryogenic temperatures. Measurements at cryogenic temperatures on SiO 2 and at room temperature only on Ta2O5 films deposited on silicon are presented.

Mots clés: Ultra low loss suspensions; Q measurements; optical dielectric coatings; silica; tantala Ta2O5; thin films

Domaines: Optique [physics.optics]; Science des matériaux [cond-mat.mtrl-sci]

M Granata, L Balzarini, J Degallaix, V Dolique, R Flaminio, et al.. INTERNAL FRICTION AND YOUNG'S MODULUS MEASUREMENTS ON SiO2 AND Ta2O5 FILMS DONE WITH AN ULTRA-HIGH Q SILICON-WAFER SUSPENSION . Archives of Metallurgy and Materials, 2015, ⟨10.1515/amm-2015-0060⟩. ⟨in2p3-01357312⟩