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Quantum engineering of collective states in semiconductor nanostructures

Abstract : This work focuses on the many-body properties of semiconductor nanostructures for quantum engineering of infrared optoelectronic devices. In particular, we theoretically investigate the optical response accounting for collective effects in systems of tunnel-coupled quantum wells. A clear manifestation of these effects appears in the optical spectrum of highly doped quantum wells, where the absorption peaks are at completely different energies with respect to the single-particle electronic transitions. We calculate light-matter interaction in two steps. First, we consider the microscopic polarization associated with the electronic transitions between confined levels of the wells, which are all coupled by dipole-dipole Coulomb interaction. Then we calculate the interaction of the resulting collective states with the electromagnetic field. The absorption spectrum is finally expressed in terms of microscopic currents, describing the collective charge oscillations. The theoretical model is applied to a series of relevant systems, and its outcomes are compared with experimental results. As the collective states are issued from the coherent superposition of several electronic excitations, they have the properties of superradiant states. They are thus a promising entity for the realization of efficient light emitters in the mid- and far-infrared frequency range.
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Contributor : Giulia Pegolotti Connect in order to contact the contributor
Submitted on : Monday, April 27, 2015 - 7:01:07 PM
Last modification on : Saturday, June 25, 2022 - 8:55:24 PM
Long-term archiving on: : Wednesday, April 19, 2017 - 8:10:48 AM


  • HAL Id : tel-01132396, version 2



Giulia Pegolotti. Quantum engineering of collective states in semiconductor nanostructures. Quantum Physics [quant-ph]. Universite Paris Diderot-Paris VII, 2014. English. ⟨tel-01132396v2⟩



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