Alloy effects in GaInN/GaN heterostructures

Duc Phuong Nguyen (1) , Nicolas Regnault (1) , Robson Ferreira (1) , Gérald Bastard (1)

1 LPA - Laboratoire Pierre Aigrain

We show that the large band offsets between GaN and InN and the heavy carrier effective masses preclude the use of the Virtual Crystal Approximation to describe the electronic structure of Ga_(1-x)In_(x)N/GaN heterostructures while this approximation works very well for the Ga_(1-x)In_(x)As/GaAs heterostructures.

Mots clés: GaInN; alloy; VCA

Domaines: Autre [cond-mat.other]

Duc Phuong Nguyen, Nicolas Regnault, Robson Ferreira, Gérald Bastard. Alloy effects in GaInN/GaN heterostructures. Solid State Communications, 2004, 130, pp.751. ⟨hal-00000821⟩