Geometrical structure of an iron epilayer on Si (111) : an X-ray standing wave analysis
Résumé
The structure of an iron film, deposited at low temperature (50 °C) upon a silicon (111) substrate, has been determined by means of X-ray Standing Wave experiments performed at LURE (Orsay, France). Experimental results are coherent with the model of an abrupt interface between the adsorbate and the surface : the first site of adsorption terminates the bulk silicon and a body-centred iron layer epitaxially grows on the substrate with a preferential growth orientation.