µc-Si1-xCx:H deposited by RF-PECVD: a novel material for PV applications - Archive ouverte HAL Access content directly
Conference Papers Year : 2013

µc-Si1-xCx:H deposited by RF-PECVD: a novel material for PV applications

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E.V. Johnson
Pavel Bulkin
P. Chapon
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hal-00931311 , version 1 (15-01-2014)

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  • HAL Id : hal-00931311 , version 1

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Sofia Gaiaschi, E.V. Johnson, Marie-Estelle Gueunier-Farret, Christophe Longeaud, Pavel Bulkin, et al.. µc-Si1-xCx:H deposited by RF-PECVD: a novel material for PV applications. E-MRS Fall Meeting 2013, Sep 2013, Warsaw, Poland. ⟨hal-00931311⟩
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