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Communication Dans Un Congrès Année : 2006

(Ga,Mn)As layers with perpendicular anisotropy: a study of magnetic domain patterns

A. Dourlat
  • Fonction : Auteur
V. Jeudy
  • Fonction : Auteur
A. Lemaitre

Résumé

The magnetic domain pattern in (Ga,Mn)As layers with perpendicular magnetic easy-axis is studied by Kerr microscopy at various temperatures. We investigate the effect of post-growth annealing. As-grown samples exhibit a strongly anisotropic domain growth with dendritic-like expansion of domains along the < 110 > directions. For annealed samples, the density of nucleation centers is decreased and domain wall propagation is more isotropic. Two kinds of pinning centers are observed in annealed samples: line-like defects that strongly hinder domain wall propagation and point-like defects with a density of a few 10(5) cm(-2).

Dates et versions

hal-01288173 , version 1 (14-03-2016)

Identifiants

Citer

A. Dourlat, Catherine Gourdon, V. Jeudy, Christophe Testelin, L. Thevenard, et al.. (Ga,Mn)As layers with perpendicular anisotropy: a study of magnetic domain patterns. 4th International Conference on Physics and Applications of Spin-Related Phenomena in Semiconductors (PASP-IV), Aug 2006, Sendai, Unknown Region. pp.4074-4077, ⟨10.1002/pssc.200672821⟩. ⟨hal-01288173⟩
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