Relationship between structure and deposition conditions for CuInO2 thin films

C. Yaicle , A. Blacklocks , A. V. Chadwick , J. Perriere (1) , A. Rougier

1 INSP - Institut des Nanosciences de Paris

CuInO2 thin films were deposited using the Pulsed Laser Deposition technique. The influence of various deposition parameters and mainly the oxygen pressure on the texture, composition and structure of the films is discussed. Films deposited with an oxygen pressure in the 0.2-1 Pa range exhibit the delafossite structure. Higher pressure introduces an increase in the oxygen content leading to a CuInO2.10 composition for the film deposited at 5 Pa and a progressive loss of the delafossite structure. As confirmed by an EXAFS study, the oxygen stoichiometry controls the Cu+/ Cu2+ ratio. (c) 2007 Elsevier B.V. All rights reserved.

Mots clés: thin films; copper indium oxide; delafossite; stoichiometry; oxygen pressure; pulsed laser deposition; EXAFS

Domaines: Matière Condensée [cond-mat]

C. Yaicle, A. Blacklocks, A. V. Chadwick, J. Perriere, A. Rougier. Relationship between structure and deposition conditions for CuInO2 thin films. Applied Surface Science, 2007, 254 (4), pp.1343-1346. ⟨10.1016/j.apsusc.2007.08.016⟩. ⟨hal-01293152⟩