Impact of a γ-Al<sub>2</sub>O<sub>3</sub>(001) barrier on LaAlO<sub>3</sub> metal-oxide-semiconductor capacitor electrical properties - Archive ouverte HAL Access content directly
Journal Articles Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Year : 2009

Impact of a γ-Al2O3(001) barrier on LaAlO3 metal-oxide-semiconductor capacitor electrical properties

(1) , , , (2) , (3) , (3) , (2) , (3)
1
2
3

Abstract

Amorphous LaAlO3 high-κ oxides were grown in a molecular beam epitaxy reactor on p-Si(001) employing a thin γ-Al2O3 epitaxial layer as buffer. Interfaces are free of SiO2 and silicates and remain abrupt even after high temperature annealing as demonstrated by x-ray photoelectron spectroscopy. Electrical measurements performed on as-deposited samples reveal dielectric constant values close to the bulk ones, small equivalent oxide thickness, and low interface state densities. Some negative charges are present leading to a flatband voltage shift. Postdeposition annealing can correct this effect.
Fichier principal
Vignette du fichier
Becerra2008.pdf (217.3 Ko) Télécharger le fichier
Origin : Publisher files allowed on an open archive

Dates and versions

hal-01939927 , version 1 (17-11-2022)

Licence

Attribution - NonCommercial - CC BY 4.0

Identifiers

Cite

L. Becerra, C. Merckling, M. El-Kazzi, N. Baboux, B. Vilquin, et al.. Impact of a γ-Al2O3(001) barrier on LaAlO3 metal-oxide-semiconductor capacitor electrical properties. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures, 2009, 27 (1), pp.384-388. ⟨10.1116/1.3065437⟩. ⟨hal-01939927⟩
41 View
0 Download

Altmetric

Share

Gmail Facebook Twitter LinkedIn More