Rapid thermal annealing and modulation-doping effects on InAs/GaAs quantum dots photoluminescence dependence on excitation power

W. Chaabani (1) , Adel Mellit (2) , M.A. Maaref (3) , C. Testelin (3, 4, 5) , A. Lemaitre (6)

1 FSS - Faculté des Sciences de Sfax
2 UMSBJ - Université Mohammed Seddik Benyahia [Jijel] | University of Jijel
3 INSP - Institut des Nanosciences de Paris
4 INSP-E1 - Nanostructures et systèmes quantiques
5 INSP-E12 - Photonique et cohérence de spin
6 LPN - Laboratoire de photonique et de nanostructures

Domaines: Physique [physics]

W. Chaabani, Adel Mellit, M.A. Maaref, C. Testelin, A. Lemaitre. Rapid thermal annealing and modulation-doping effects on InAs/GaAs quantum dots photoluminescence dependence on excitation power. Physica B: Condensed Matter, 2016, 493, pp.53-57. ⟨10.1016/j.physb.2016.04.025⟩. ⟨hal-02390124⟩