Ti-Doped Sapphire (Al(2)O(3)) Single Crystals Grown by the Kyropoulos Technique and Optical Characterizations. - ENSTA Paris - École nationale supérieure de techniques avancées Paris Accéder directement au contenu
Article Dans Une Revue Crystal Growth & Design Année : 2011

Ti-Doped Sapphire (Al(2)O(3)) Single Crystals Grown by the Kyropoulos Technique and Optical Characterizations.

Résumé

Transparent high optical quality and large Ti-sapphire (Ti(3+)-doped Al(2)O(3)) single crystals have been grown by the Kyropoulos technique (KT) for optical amplification. The present work shows that by the utilization of KT growth technology and the optimization of the growth conditions it is possible to grow Ti-doped Al(2)O(3), 100 mm in diameter and 5 kg in weight. We have demonstrated that large Ti(0.25 atom %)-doped Al(2)O(3) crystals show high chemical homogeneities and good optical properties and amplify the energy without any special annealing. Ti-doped sapphire crystals are for high power laser applications and particularly for the shortest pulses ever produced from a laser oscillator.

Domaines

Matériaux
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Dates et versions

hal-00633961 , version 1 (30-11-2023)

Identifiants

Citer

Abdeldjelil Nehari, Alain Brenier, Gerard Panzer, Kheireddine Lebbou, Jerome Godfroy, et al.. Ti-Doped Sapphire (Al(2)O(3)) Single Crystals Grown by the Kyropoulos Technique and Optical Characterizations.. Crystal Growth & Design, 2011, 11 (2), pp.445-448. ⟨10.1021/cg101190q⟩. ⟨hal-00633961⟩
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