X-ray reflection spectroscopy of the HfO2/SiO2/Si system in the region of the O-K absorption edge
Résumé
The x-ray reflection spectra, i.e. the reflected intensity as a function of the incident photon energy, of the HfO2/SiO2/Si system in the region of the O-K absorption edge are observed for various glancing angles. It is demonstrated that the variation of the glancing angle enables the depth profilometry of the sample. By using the Kramers-Kronig analysis, the reflection spectra are transformed into absorption spectra, from which the local physico-chemical environment of the oxygen atoms can be deduced. Thus we show in a non-destructuve way that the HfO2 amorphous film has a well defined structure with a thin superficial layer presenting defect points or various local atomic structures.
Domaines
Autre [cond-mat.other]
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